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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF861 UHF power LDMOS transistor
Preliminary specification 1999 Aug 26
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on underside eliminates DC isolators, reducing common mode inductance * Designed for broadband operation (UHF band). APPLICATIONS * Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The common source is connected to the mounting flange.
3 Top view 4
MBK777
BLF861
PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source, connected to flange DESCRIPTION
1
2
5
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, class-AB PAL BG (TV), class-AB Notes 1. Sync compression: input sync: 33%; output sync: 27 % LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Tmb 25 C CONDITIONS - - - - -65 - MIN. MAX. 65 15 18 318 +150 200 V V A W C C UNIT f (MHz) 860 860 (ch 69) VDS (V) 32 32 PL (W) 150 typ.170 (peak sync) Gp (dB) >14 >14 D (%) >50 >40 Gp (dB) 1 note 1
1999 Aug 26
2
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 318 W
BLF861
VALUE 0.55 0.2
UNIT K/W K/W
CHARACTERISTICS Tj = 25 C; per section; unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Cis Cos Crs PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 1.5 mA VDS = 10 V; ID = 150 mA VGS = 0; VDS = 32 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 10 V; ID = 4 A VGS = VGSth + 9 V; ID = 4 A VGS = 0; VDS = 32 V; f = 1 MHz VGS = 0; VDS = 32 V; f = 1 MHz VGS = 0; VDS = 32 V; f = 1 MHz MIN. 65 4 - 18 - - - - - - TYP. - - - - - 4 160 84 42 6 MAX. - 5 10 - 100 - - - - - UNIT V V A A nA S m pF pF pF
200 COS (pF) 160
120
80
40
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz; Tj = 25 C.
Fig.2
Output capacitance as a function of drainsource voltage; typical values per section.
1999 Aug 26
3
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
APPLICATION INFORMATION RF performance in a common source class-AB circuit. T h = 25 C; Rth mb-h = 0.15 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB 2-tone, class-AB PAL BG (TV), class-AB Notes 1. Sync compression: input sync: 33%; output sync: 27 % measured in narrowband testcircuit. Ruggedness in class-AB operation The BLF861 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated load power. f (MHz) 860 f1 = 860 f1 = 860.1 860 (ch 69) VDS (V) 32 32 32 IDQ (A) 1.15 1.15 1.15 PL (W) 150 150 (PEP) typ.170 (peak sync) Gp (dB) >14 >14 >14 D (%) >50 >40 >40 dIM (dBc) - -30 - Gp (dB) 1 - note 1
12 Zi () xi 8
10 ZL () 8
RL
6 4 ri 2 0 -2 -4
XL
4
0 400
500
600
700
800 900 f (MHz)
-6 400
500
600
700
800 900 f (MHz)
CW, class-AB operation; VDS = 32 V; I DQ = 1.15 A; PL = 170 W (total device) ; Th = 25 C.
CW, class-AB operation; V DS = 32 V; I DQ = 1.15 A; PL = 170 W (total device) ; Th = 25 C.
Fig.3
Input impedance as a function of frequency (series components); typical values per section. 4
Fig.4
Load impedance as a function of frequency (series components); typical values per section.
1999 Aug 26
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
16 GP (dB) 12
GP
80 D (%) 60
0 dim (dB) -20
d3
D 8 40 -40
d5
4
20
-60
0 0 100
0 200 300 PL (PEP) (W)
-80 0 100 200 300 PL (PEP) (W)
Th = 25 C; VDS = 32V; I DQ = 1.15 A; 2-tone: f 1 = 860 MHz (-6 dB); f2 = 860.1 MHz (-6 dB) measured in 860 MHz testcircuit.
T h = 25 C; VDS = 32 V; I DQ = 1.15 A; 2-tone: f 1 = 860 MHz (-6 dB); f2 = 860.1 MHz (-6 dB) measured in 860 MHz testcircuit.
Fig.5
Power gain and drain efficiency as functions of peak envelope load power; typical values.
Fig.6
Intermodulation distortion as a function of peak envelope output power; typical values.
16 GP (dB) 12
GP
80 D (%) 60
D
8
40
4
20
0 0 50 100 150
0 200 PL (W)
Th = 25 C; VDS = 32 V; ; IDQ = 1.15 A; CW, class-AB; f = 860 MHz; measured in 860 MHz testcircuit.
Fig.7
Power gain and drain efficiency as functions of load power; typical values.
1999 Aug 26
5
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
+Vs
R2 C19 C18 R3 R4 L1 C16 50 Ohm Input R5 C2 C3 10mm L3 C4 L4 L6 C17 R6 L2 L8 L12 L14 C5 C6 C7 R1 C9 C8
L19 C11 C10 C12 C13 C14
C26
+Vbias
4.5mm 4mm L9 L7 L5 L11 8mm L13
C25
L18
R7
C24 L15 C20 C21 L17 B2 C15 50 Ohm Output
C1
B1
L16 C22
C23
T1
L10
Fig.8 Class-AB broadband testcircuit.
List of components COMPONENT C1 C2 C3, C6, C9 C4 C5 C7 C8 C10, C11 C12 C13 C14 C15 C16, C17 C18, C25 C19, C26 C20, C21, C22, C23 DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
multilayer ceramic chip capacitor; note 1 20 pF multilayer ceramic chip capacitor; note 1 4.3 pF Tekelec trimmer 0.6 to 4.5 pF multilayer ceramic chip capacitor; note 1 8.2 pF multilayer ceramic chip capacitor; note 1 10 pF multilayer ceramic chip capacitor; note 1 6.8 pF multilayer ceramic chip capacitor; note 1 13 pF multilayer ceramic chip capacitor; note 2 8.2 pF multilayer ceramic chip capacitor; note 2 3.3 pF multilayer ceramic chip capacitor; note 2 6.8 pF multilayer ceramic chip capacitor; note 2 1 pF multilayer ceramic chip capacitor; note 2 30 pF multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor 1 nF 100 nF 100 F
multilayer ceramic chip capacitor; note 3 100 pF
1999 Aug 26
6
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
COMPONENT C24 L1, L2 L3, L4 L5, L6 L7, L8 L9, L10 L11, L12 L13, L14 L15, L16 L17 L18 L19 B1 B2 R1, R7 R2 R3 R4 R5, R6 Notes
DESCRIPTION electrolytic capacitor stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 ferrite wire inductor (hairpin) semi rigid coax balun UT70-25 semi rigid coax balun UT70-25 resistor resistor resistor resistor SMD resistor
VALUE 1000 F
DIMENSIONS
CATALOGUE No.
30.6 x 2.4 mm 28 x 2.4 mm 10 x 5 mm 20 x 10 mm 5.5 x 15 mm 10 x 10 mm 15 x 5 mm 48.5 x 2.4 mm 10 x 2.4 mm height = 8 mm length = 20 mm Z = 25 1.5 70 mm Z = 25 1.5 48.5 mm 10 1 k 100 k 100 3.9
1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. 3. American Technical Ceramics type 100B or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (r = 2.2); thickness 0.79 mm.
1999 Aug 26
7
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
80 mm
95 mm
95 mm
+Vbias
+Vs C26 C25 C18 C19
R2 R4 B1
R5 C2 C3 R6 C4 C5 C6
R3 L18 R7 B2 C10 C11 C12 L19 C24 C13 C14 C20 C21 C22 C23
BLF861
C16
C8 C7 R1 C9
C1
C17
C15
Dimensions in mm. The components are situated on one side of the Rogers 5880 printed circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.9 Printed-circuit board and component layout for the class-AB broadband testcircuit.
1999 Aug 26
8
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
16 GP (dB) 12
GP
80 D (%) 60
250 Po sync (W) 200
D 8 40
150
100 4 20 50
0 400
500
600
700
0 800 900 f (MHz)
0 400
500
600
700
800 900 f (MHz)
Th = 25 C; VCE = 32V; I DQ = 1.15A; PAL BG signal (TV); Sync compression: input 33 %, output 27 %; measured in broadband testcircuit.
T h = 25 C; VCE = 32V; I DQ = 1.15A; PAL BG signal (TV); Sync compression: input 33 %, output 27 %; measured in broadband testcircuit.
Fig.10 Power gain and drain efficiency as functions of frequency; typical values.
Fig.11 Peak envelope sync power as a function of frequency; typical values.
16 GP (dB) 12
GP
80 D (%) 60
D 8 40
4
20
0 400
500
600
700
0 800 900 f (MHz)
Th = 25 C; VDS= 32V; IDQ = 1.15 A; CW class-AB; PL = 150 W measured in broadband testcircuit.
Fig.12 Power gain and drain efficiency as functions of frequency; typical values.
1999 Aug 26
9
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
PACKAGE OUTLINE
BLF861
Flanged balanced LDMOST package; 2 mounting holes; 4 leads
SOT540A
D
A F D1
U1 q H1 C w2 M C M
B
c
1
2
H
U2
p
E1 w1 M A M B M
E
5
A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.77 5.00 b 8.51 8.26 c 0.15 0.10 D D1 e E E1 F 1.78 1.52 H H1 p 3.38 3.12 Q 2.72 2.46 q 27.94 U1 34.16 33.91 U2 9.91 9.65 w1 0.25 w2 0.51 w3 0.25
10.26 10.31 22.05 22.05 10.21 10.06 10.01 21.64 21.64
15.75 18.72 14.73 18.47
0.227 0.335 0.006 0.868 0.868 0.404 0.406 0.070 0.620 0.737 0.133 0.107 1.345 0.390 1.100 0.010 0.020 0.010 0.402 0.197 0.325 0.004 0.852 0.852 0.396 0.394 0.060 0.580 0.727 0.123 0.097 1.335 0.380
OUTLINE VERSION SOT540A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-03-30 99-08-27
1999 Aug 26
10
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF861
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Aug 26
11
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
budgetnum/printrun/ed/pp12
Date of release: 1999
Aug 26
Document order number:
9397 750 06336

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